IRF520S

new-10%

Manufacturer part number:IRF520S

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 9.2A D2PAK

Case Package:SOT-23

Datasheet:IRF520S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK
Weight	1.437803g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2017
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	9.2A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.7W Ta 60W Tc
Element Configuration	Single
Power Dissipation	3.7W
Turn On Delay Time	8.8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	270mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.2A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	30ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	9.2A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	360pF
Drain to Source Resistance	270mOhm
Rds On Max	270 mΩ
Height	4.83mm
Length	10.41mm
Width	9.65mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead