IRF620S

new-10%

Manufacturer part number:IRF620S

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 5.2A D2PAK

Case Package:SOT-23

Datasheet:IRF620S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	5.2A
Number of Channels	1
Power Dissipation-Max	3W Ta 50W Tc
Element Configuration	Single
Power Dissipation	50W
Turn On Delay Time	7.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	260pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.2A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	22ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	5.2A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	260pF
Drain to Source Resistance	800mOhm
Rds On Max	800 mΩ
Height	4.83mm
Length	10.67mm
Width	9.65mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead