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IRF744PBF

IRF744PBF

IRF744PBF

Vishay Siliconix

MOSFET N-CH 450V 8.8A TO-220AB

SOT-23

IRF744PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Turn On Delay Time 8.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 630mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.8A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 450V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 8.8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 450V
Input Capacitance 1.4nF
Drain to Source Resistance 630mOhm
Rds On Max 630 mΩ
Height 9.01mm
Length 10.41mm
Width 4.7mm
RoHS Status ROHS3 Compliant

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