SI3456BDV-T1-E3

new-10%

Manufacturer part number:SI3456BDV-T1-E3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 30V 4.5A 6-Pin TSOP T/R

Case Package:SOT-23

Datasheet:SI3456BDV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1.1W Ta
Element Configuration	Single
Power Dissipation	1.1W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.5A Ta
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	6A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	35mOhm
Rds On Max	35 mΩ
Height	990.6μm
Length	3.0988mm
Width	1.7018mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free