IPI50R299CPXKSA1

new-10%

Manufacturer part number:IPI50R299CPXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 500V 12A TO262-3

Case Package:SOT-23

Datasheet:IPI50R299CPXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	104W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	104W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	299m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id	3.5V @ 440μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1190pF @ 100V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.299Ohm
Drain to Source Breakdown Voltage	550V
Pulsed Drain Current-Max (IDM)	26A
Avalanche Energy Rating (Eas)	289 mJ
RoHS Status	RoHS Compliant