IRF820S

new-10%

Manufacturer part number:IRF820S

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 500V 2.5A D2PAK

Case Package:SOT-23

Datasheet:IRF820S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	2.5A
Number of Channels	1
Power Dissipation-Max	3.1W Ta 50W Tc
Element Configuration	Single
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.5A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	8.6ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	2.5A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	360pF
Drain to Source Resistance	3Ohm
Rds On Max	3 Ω
Height	4.83mm
Length	10.67mm
Width	9.65mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead