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IRF9Z14STRL

IRF9Z14STRL

IRF9Z14STRL

Vishay Siliconix

MOSFET P-CH 60V 6.7A D2PAK

SOT-23

IRF9Z14STRL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 3.7W Ta 43W Tc
Element Configuration Single
Turn On Delay Time 11 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.7A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 63ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 6.7A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 270pF
Drain to Source Resistance 500mOhm
Rds On Max 500 mΩ
Height 4.83mm
Length 10.67mm
Width 9.65mm
RoHS Status Non-RoHS Compliant

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