FDS6673BZ-F085

new-10%

Manufacturer part number:FDS6673BZ-F085

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 30V 14.5A 8-SOIC

Case Package:SOT-23

Datasheet:FDS6673BZ-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LIFETIME (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	230.4mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	14 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.8m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14.5A Ta
Gate Charge (Qg) (Max) @ Vgs	124nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	105 ns
Turn-Off Delay Time	225 ns
Continuous Drain Current (ID)	14.5A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Feedback Cap-Max (Crss)	900 pF
Radiation Hardening	No
RoHS Status	ROHS3 Compliant