IRFBC20L

new-10%

Manufacturer part number:IRFBC20L

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 600V 2.2A TO-262

Case Package:SOT-23

Datasheet:IRFBC20L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	I2PAK
Weight	2.387001g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	2.2A
Number of Channels	1
Power Dissipation-Max	3.1W Ta 50W Tc
Element Configuration	Single
Power Dissipation	50W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.4Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.2A Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	23ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	2.2A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Input Capacitance	350pF
Drain to Source Resistance	4.4Ohm
Rds On Max	4.4 Ω
Height	9.65mm
Length	10.67mm
Width	4.83mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead