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IRFP23N50LPBF

IRFP23N50LPBF

IRFP23N50LPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 235mOhm @ 14A, 10V ±30V 3600pF @ 25V 150nC @ 10V 500V TO-247-3

SOT-23

IRFP23N50LPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 235mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 370W Tc
Element Configuration Single
Power Dissipation 370W
Turn On Delay Time 26 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 235mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 94ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 23A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 3.6nF
Drain to Source Resistance 190mOhm
Rds On Max 235 mΩ
Nominal Vgs 5 V
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.990016 $1.990016
10 $1.877374 $18.77374
100 $1.771108 $177.1108
500 $1.670857 $835.4285
1000 $1.576280 $1576.28
IRFP23N50LPBF Product Details

IRFP23N50LPBF Overview


A device's maximal input capacitance is 3600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 23A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 53 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 190mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 26 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFP23N50LPBF Features


a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 190mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IRFP23N50LPBF Applications


There are a lot of Vishay Siliconix
IRFP23N50LPBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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