IXTA1N100

new-10%

Manufacturer part number:IXTA1N100

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 1.5A TO-263

Case Package:SOT-23

Datasheet:IXTA1N100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Resistance	11Ohm
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	54W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	54W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.5A Tc
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Rise Time	19ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	1.5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	6A
Avalanche Energy Rating (Eas)	200 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free