IRFR9020TRLPBF

new-10%

Manufacturer part number:IRFR9020TRLPBF

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 50V 9.9A DPAK

Case Package:SOT-23

Datasheet:IRFR9020TRLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	280MOhm
Terminal Finish	TIN
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	42W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	DRAIN
Turn On Delay Time	8.2 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	280m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.9A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	67ns
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	-9.9A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	50V
Avalanche Energy Rating (Eas)	250 mJ
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free