IRFU1N60A

new-10%

Manufacturer part number:IRFU1N60A

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 600V 1.4A I-PAK

Case Package:SOT-23

Datasheet:IRFU1N60A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	329.988449mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	unknown
Current Rating	1.4A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	36W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7 Ω @ 840mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	229pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.4A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	1.4A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	7Ohm
Pulsed Drain Current-Max (IDM)	5.6A
Avalanche Energy Rating (Eas)	93 mJ
Height	6.22mm
Length	6.73mm
Width	2.38mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead