Name: IRLU3636PBF
Brand: Infineon Technologies
SKU: IRLU3636PBF
Price: 2.65000 USD
Availability: InStock

new-10%

IRLU3636PBF

Manufacturer part number:IRLU3636PBF

Manufacturer:Infineon Technologies

Description:IRLU3636PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLU3636PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	143W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	143W
Case Connection	DRAIN
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3779pF @ 50V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	49nC @ 4.5V
Rise Time	216ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	96 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	99A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	60V
Nominal Vgs	2.5 V
Height	6.223mm
Length	6.7056mm
Width	2.3876mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

IRLU3636PBF Product Details

IRLU3636PBF Description

IRLU3636PBF is a type of HEXFET? power MOSFET manufactured by Infineon Technologies based on the latest processing techniques for the logic-level drive. Moreover, it is able to provide a fast switching speed and improved gate, avalanche, and dynamic dv/dt ruggedness. Due to its specific characteristics, it is efficient and reliable for electronic designers to use in various applications.