FDI038AN06A0

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FDI038AN06A0

Manufacturer part number:FDI038AN06A0

Manufacturer:ON Semiconductor

Description:MOSFET 60V 80a 0.0038 Ohms/VGS=10V

Case Package:SOT-23

Datasheet:FDI038AN06A0 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Weight	2.084g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	80A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	124nC @ 10V
Rise Time	144ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-262AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0038Ohm
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	625 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free