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BSC030N08NS5ATMA1

BSC030N08NS5ATMA1

BSC030N08NS5ATMA1

Infineon Technologies

BSC030N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSC030N08NS5ATMA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 139W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 95μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.003Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 250 mJ
Max Junction Temperature (Tj) 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.98313 $4.91565
10,000 $0.96250 $9.625
BSC030N08NS5ATMA1 Product Details
BSC030N08NS5ATMA1 Description

BSC030N08NS5ATMA1 is a OptiMOS?5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS? 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS? 5 80 V has an RDS(on) reduction of up to 43%.
BSC030N08NS5ATMA1 Features

Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44 %
RDS(on) reduction of up to 43 % from previous generation
Less paralleling required
BSC030N08NS5ATMA1 Applications

Low voltage drives
Adapter
Telecom
Server
Solar

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