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SI1013R-T1-E3

SI1013R-T1-E3

SI1013R-T1-E3

Vishay Siliconix

MOSFET 20V 0.35A 0.15W

SOT-23

SI1013R-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75A
Number of Pins 3
Supplier Device Package SC-75A
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.2Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150mW Ta
Element Configuration Single
Power Dissipation 150mW
Turn On Delay Time 5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 350mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time 9ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -350mA
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage -20V
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
Height 700μm
Length 1.58mm
Width 760μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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