SI1022R-T1-E3

new-10%

Manufacturer part number:SI1022R-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 60V 0.33A

Case Package:SOT-23

Datasheet:SI1022R-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75A
Number of Pins	3
Supplier Device Package	SC-75A
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	3Ohm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	250mW Ta
Element Configuration	Single
Power Dissipation	250mW
Turn On Delay Time	25 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	30pF @ 25V
Current - Continuous Drain (Id) @ 25°C	330mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	330mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Input Capacitance	30pF
Drain to Source Resistance	1.25Ohm
Rds On Max	1.25 Ω
Nominal Vgs	2.5 V
Height	700μm
Length	1.58mm
Width	760μm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free