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IXTQ180N10T

IXTQ180N10T

IXTQ180N10T

IXYS

MOSFET (Metal Oxide) N-Channel Tube 6.4m Ω @ 25A, 10V ±30V 6900pF @ 25V 151nC @ 10V TO-3P-3, SC-65-3

SOT-23

IXTQ180N10T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMV™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 480W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 480W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 151nC @ 10V
Rise Time 54ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 180A
Drain-source On Resistance-Max 0.0064Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 450A
Avalanche Energy Rating (Eas) 750 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.34000 $4.34
30 $3.48767 $104.6301
120 $3.17750 $381.3
510 $2.57300 $1312.23
1,020 $2.17000 $2.17
IXTQ180N10T Product Details

IXTQ180N10T Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 750 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6900pF @ 25V.This device has a continuous drain current (ID) of [180A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.A maximum pulsed drain current of 450A is the maximum peak drain current rated for this device.Its overall power consumption can be reduced by using drive voltage (10V).

IXTQ180N10T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 450A.


IXTQ180N10T Applications


There are a lot of IXYS
IXTQ180N10T applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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