SI1025X-T1-GE3

new-10%

Manufacturer part number:SI1025X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2P-CH 60V 0.19A SC-89

Case Package:SOT-23

Datasheet:SI1025X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	32.006612mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	4Ohm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	Other Transistors
Max Power Dissipation	250mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI1025
Pin Count	3
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	23pF @ 25V
Current - Continuous Drain (Id) @ 25°C	190mA
Gate Charge (Qg) (Max) @ Vgs	1.7nC @ 15V
Drain to Source Voltage (Vdss)	60V
Continuous Drain Current (ID)	-500mA
Threshold Voltage	-2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.19A
Drain to Source Breakdown Voltage	-60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	600μm
Length	1.7mm
Width	1.2mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free