SI1050X-T1-E3

new-10%

Manufacturer part number:SI1050X-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 8V 1.34A SOT563F

Case Package:SOT-23

Datasheet:SI1050X-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Supplier Device Package	SC-89-6
Weight	32.006612mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Turn On Delay Time	6.8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	86mOhm @ 1.34A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	585pF @ 4V
Current - Continuous Drain (Id) @ 25°C	1.34A Ta
Gate Charge (Qg) (Max) @ Vgs	11.6nC @ 5V
Rise Time	35ns
Drain to Source Voltage (Vdss)	8V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	1.34A
Gate to Source Voltage (Vgs)	5V
Input Capacitance	585pF
Drain to Source Resistance	86mOhm
Rds On Max	86 mΩ
Height	600μm
Length	1.7mm
Width	1.2mm
RoHS Status	ROHS3 Compliant