SI1013X-T1-E3

new-10%

Manufacturer part number:SI1013X-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 350MA SC89-3

Case Package:SOT-23

Datasheet:SI1013X-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Number of Pins	3
Supplier Device Package	SC-89-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	1.2Ohm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	250mW Ta
Element Configuration	Single
Power Dissipation	250mW
Turn On Delay Time	5 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	350mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Rise Time	9ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	-350mA
Gate to Source Voltage (Vgs)	6V
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	1.2Ohm
Rds On Max	1.2 Ω
Height	787.4μm
Length	1.6764mm
Width	939.8μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free