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SI1013X-T1-E3

SI1013X-T1-E3

SI1013X-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 350MA SC89-3

SOT-23

SI1013X-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Supplier Device Package SC-89-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.2Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 250mW Ta
Element Configuration Single
Power Dissipation 250mW
Turn On Delay Time 5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 350mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time 9ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -350mA
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage 20V
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
Height 787.4μm
Length 1.6764mm
Width 939.8μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.977190 $0.97719
10 $0.921878 $9.21878
100 $0.869696 $86.9696
500 $0.820468 $410.234
1000 $0.774026 $774.026

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