IXFH15N80Q

new-10%

Manufacturer part number:IXFH15N80Q

Manufacturer:IXYS

Description:MOSFET N-CH 800V 15A TO-247AD

Case Package:SOT-23

Datasheet:IXFH15N80Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
ECCN Code	EAR99
Resistance	600mOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	15A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	15A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	53 ns
Continuous Drain Current (ID)	15A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	1000 mJ
Recovery Time	250 ns
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free