SI1054X-T1-GE3

new-10%

Manufacturer part number:SI1054X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 12V 1.32A SC89-6

Case Package:SOT-23

Datasheet:SI1054X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Supplier Device Package	SC-89-6
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Power Dissipation	236mW
Turn On Delay Time	5.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	95mOhm @ 1.32A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	8.57nC @ 5V
Rise Time	13ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	1.32A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	12V
Input Capacitance	480pF
Drain to Source Resistance	95mOhm
Rds On Max	95 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant