SUP75N03-04-E3

new-10%

Manufacturer part number:SUP75N03-04-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 75A TO220AB

Case Package:SOT-23

Datasheet:SUP75N03-04-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Bulk
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	3.7W Ta 187W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	187W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	10742pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	95 ns
Turn-Off Delay Time	190 ns
Continuous Drain Current (ID)	75A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.006Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	250A
Avalanche Energy Rating (Eas)	280 mJ
Height	9.01mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant