SI1067X-T1-E3

new-10%

Manufacturer part number:SI1067X-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 1.06A SOT563F

Case Package:SOT-23

Datasheet:SI1067X-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SC-89-6
Weight	32.006612mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	150mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Turn On Delay Time	14 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	150mOhm @ 1.06A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	375pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	9.3nC @ 5V
Rise Time	22ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	1.06A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Input Capacitance	375pF
Drain to Source Resistance	214mOhm
Rds On Max	150 mΩ
Height	600μm
Length	1.7mm
Width	1.2mm
RoHS Status	ROHS3 Compliant