SI1302DL-T1-GE3

new-10%

Manufacturer part number:SI1302DL-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 600MA SC-70-3

Case Package:SOT-23

Datasheet:SI1302DL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Weight	6.208546mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	280mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	480m Ω @ 600mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	600mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	600mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.6A
Drain-source On Resistance-Max	0.48Ohm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant