CSD19536KTTT

new-10%

CSD19536KTTT

Manufacturer part number:CSD19536KTTT

Manufacturer:Texas Instruments

Description:MOSFET N-CH 100V 200A TO263

Case Package:SOT-23

Datasheet:CSD19536KTTT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	2 (1 Year)
Number of Terminations	2
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD19536
Number of Elements	1
Power Dissipation-Max	375W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	12000pF @ 50V
Current - Continuous Drain (Id) @ 25°C	200A Ta
Gate Charge (Qg) (Max) @ Vgs	153nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	200A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0028Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	806 mJ
Feedback Cap-Max (Crss)	61 pF
Height	4.83mm
Length	10.18mm
Width	8.41mm
Thickness	4.44mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead