IRFP460C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
IRFP460C Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
20A
Number of Elements
1
Voltage
500V
Power Dissipation-Max
235W Tc
Element Configuration
Single
Current
20A
Power Dissipation
235W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
240m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
170nC @ 10V
Rise Time
150ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
180 ns
Turn-Off Delay Time
380 ns
Continuous Drain Current (ID)
20A
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.01000
$2.01
500
$1.9899
$994.95
1000
$1.9698
$1969.8
1500
$1.9497
$2924.55
2000
$1.9296
$3859.2
2500
$1.9095
$4773.75
IRFP460C Product Details
IRFP460C Description
The planar stripe, DMOS technology developed by Fairchild is used to create IRFP460C N-Channel enhancement mode power field effect transistors. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These devices are ideal for power factor corrections and high efficiency switch mode power supply.