IXFP16N50P3

new-10%

Manufacturer part number:IXFP16N50P3

Manufacturer:IXYS

Description:MOSFET Polar3 HiPerFET Power MOSFET

Case Package:SOT-23

Datasheet:IXFP16N50P3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™, Polar3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	330W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	360m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	1515pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	16A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	500V
Height	16mm
Length	10.66mm
Width	4.83mm
RoHS Status	ROHS3 Compliant