SI1470DH-T1-GE3

new-10%

Manufacturer part number:SI1470DH-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 5.1A SC-70-6

Case Package:SOT-23

Datasheet:SI1470DH-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	66MOhm
Terminal Finish	Pure Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1.5W Ta 2.8W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	66m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	510pF @ 15V
Current - Continuous Drain (Id) @ 25°C	5.1A Tc
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 5V
Rise Time	51ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	7.1 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	3.8A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	5 mJ
Nominal Vgs	600 mV
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free