SI1922EDH-T1-GE3

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Manufacturer part number:SI1922EDH-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SI1922EDH-T1-GE3 - MOSFET, NN CH, 20V, 1.3A, SOT363

Case Package:SOT-23

Datasheet:SI1922EDH-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	7.512624mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	1.25W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI1922
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	740mW
Turn On Delay Time	22 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	198m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 8V
Rise Time	80ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	220 ns
Turn-Off Delay Time	645 ns
Continuous Drain Current (ID)	1.3A
Threshold Voltage	400mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free