STN3NF06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STN3NF06L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
4A
Base Part Number
STN3N
Pin Count
4
Number of Elements
1
Power Dissipation-Max
3.3W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.3W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
340pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4A Tc
Gate Charge (Qg) (Max) @ Vgs
9nC @ 5V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
4A
Threshold Voltage
2.8V
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
4A
Drain to Source Breakdown Voltage
60V
Height
1.8mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.30238
$1.20952
8,000
$0.28375
$2.27
12,000
$0.27443
$3.29316
28,000
$0.26935
$7.5418
STN3NF06L Product Details
STN3NF06L Description
The Power MOSFET STN3NF06L realized with STMicroelectronics unique STripFET? process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application with low gate charge drive requirements. STN3NF06L Features
60V, 4A N-channel STripFET? II power MOSFET in a 4 pin SOT-223 package Exceptional dv/dt capability 100% avalanche tested Low threshold drive Suitable for switching applications STN3NF06L Applications
Industrial Aerospace & defenseAppliancesBuilding automationElectronic point of sale (EPOS)Factory automation & controlGrid infrastructureIndustrial transport (non-car & non-light truck)LightingMedicalMotor drivesPower deliveryPro audio, video & signageTest & measurement Enterprise systems Data center & enterprise computingEnterprise machineEnterprise projectors Personal electronics Connected peripherals & printersData storageGamingHome theater & entertainmentMobile phonesPC & notebooksPortable electronicsTabletsTVWearables (non-medical)