SI2333DDS-T1-GE3

new-10%

SI2333DDS-T1-GE3

Manufacturer part number:SI2333DDS-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SI2333DDS-T1-GE3 - MOSFET, P-KANAL, 12V, SOT23

Case Package:SOT-23

Datasheet:SI2333DDS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Ti[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.2W Ta 1.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.2W
Turn On Delay Time	26 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1275pF @ 6V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 8V
Rise Time	24ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	-5A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.028Ohm
Drain to Source Breakdown Voltage	-12V
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free