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SI2343DS-T1

SI2343DS-T1

SI2343DS-T1

Vishay Siliconix

MOSFET P-CH 30V 3.1A SOT23

SOT-23

SI2343DS-T1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 750mW Ta
Element Configuration Single
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 53mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.1A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 540pF
Drain to Source Resistance 53mOhm
Rds On Max 53 mΩ
Height 1.02mm
Length 3.04mm
Width 1.4mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.390719 $0.390719
10 $0.368602 $3.68602
100 $0.347738 $34.7738
500 $0.328055 $164.0275
1000 $0.309486 $309.486

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