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SI3447BDV-T1-E3

SI3447BDV-T1-E3

SI3447BDV-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 4.5A 6-TSOP

SOT-23

SI3447BDV-T1-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 53mOhm
Terminal Finish Matte Tin (Sn)
Additional FeatureULTRA-LOW RESISTANCE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count6
Number of Elements 1
Power Dissipation-Max 1.1W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation1.1W
Turn On Delay Time20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time46ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 62 ns
Reverse Recovery Time 40 ns
Continuous Drain Current (ID) -4.5A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Dual Supply Voltage -12V
Nominal Vgs -1 V
Height 990.6μm
Length 3.0988mm
Width 3mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3559 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.886136$0.886136
10$0.835978$8.35978
100$0.788658$78.8658
500$0.744017$372.0085
1000$0.701903$701.903

About SI3447BDV-T1-E3

The SI3447BDV-T1-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 12V 4.5A 6-TSOP.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI3447BDV-T1-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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