SI3447BDV-T1-E3

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Manufacturer part number:SI3447BDV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 4.5A 6-TSOP

Case Package:SOT-23

Datasheet:SI3447BDV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	53mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	20 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.5A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Rise Time	46ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	46 ns
Turn-Off Delay Time	62 ns
Reverse Recovery Time	40 ns
Continuous Drain Current (ID)	-4.5A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
Dual Supply Voltage	-12V
Nominal Vgs	-1 V
Height	990.6μm
Length	3.0988mm
Width	3mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free