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IRFSL4610PBF

IRFSL4610PBF

IRFSL4610PBF

Infineon Technologies

MOSFET N-CH 100V 73A TO-262

SOT-23

IRFSL4610PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 73A
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 190W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 50V
Current - Continuous Drain (Id) @ 25°C 73A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 87ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 3 ns
Continuous Drain Current (ID) 73A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 290A
Height 9.65mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.163353 $2.163353
10 $2.040899 $20.40899
100 $1.925377 $192.5377
500 $1.816394 $908.197
1000 $1.713578 $1713.578

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