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IRFR13N15DPBF

  • IRFR13N15DPBF
  • IRFR13N15DPBF

IRFR13N15DPBF

IRFR13N15DPBF

Infineon Technologies

IRFR13N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFR13N15DPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Power Dissipation-Max 86W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 8.3A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.93000 $1.93
10 $1.71400 $17.14
100 $1.37230 $137.23
500 $1.08372 $541.86
IRFR13N15DPBF Product Details

IRFR13N15DPBF Description


IRFR13N15DPBF is a 150v HEXFET? Power MOSFET. The Infineon IRFR13N15DPBF is designed for high-frequency DC-DC converters applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRFR13N15DPBF is in the TO-252-3 package with 86W power dissipation.



IRFR13N15DPBF Features


  • RoHS Compliant

  • Low RDS(on)

  • Industry-leading quality

  • Dynamic dv/dt Rating

  • Fast Switching

  • Fully Avalanche Rated

  • 175°C Operating Temperature



IRFR13N15DPBF Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


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