SI3475DV-T1-E3

new-10%

Manufacturer part number:SI3475DV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 200V 0.95A 6-TSOP

Case Package:SOT-23

Datasheet:SI3475DV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Weight	19.986414mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	2
Number of Channels	1
Power Dissipation-Max	2W Ta 3.2W Tc
Element Configuration	Single
Power Dissipation	2W
Turn On Delay Time	14 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	1.61Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 50V
Current - Continuous Drain (Id) @ 25°C	950mA Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	29ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	-950mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-200V
Input Capacitance	500pF
Drain to Source Resistance	1.61Ohm
Rds On Max	1.61 Ω
Height	1mm
Length	3.05mm
Width	1.65mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free