SI3552DV-T1-GE3

new-10%

Manufacturer part number:SI3552DV-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans Mosfet N/p-ch 30V 2.5A/1.8A 6-PIN TSOP T/r

Case Package:SOT-23

Datasheet:SI3552DV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	19.986414mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	1.15W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI3552
Pin Count	6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.15W
FET Type	N and P-Channel
Rds On (Max) @ Id, Vgs	105m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 5V
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	2.5A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.105Ohm
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant