Welcome to Hotenda.com Online Store!

logo
userjoin
Home

PSMN004-55W,127

PSMN004-55W,127

PSMN004-55W,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 4.2m Ω @ 25A, 10V ±15V 13000pF @ 25V 226nC @ 5V 55V TO-247-3

SOT-23

PSMN004-55W,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 1999
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 226nC @ 5V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±15V
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.005Ohm
Pulsed Drain Current-Max (IDM) 300A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 357 mJ
RoHS Status ROHS3 Compliant
PSMN004-55W,127 Product Details

PSMN004-55W,127 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 357 mJ.A device's maximal input capacitance is 13000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 100A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 55V.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

PSMN004-55W,127 Features


the avalanche energy rating (Eas) is 357 mJ
based on its rated peak drain current 300A.
a 55V drain to source voltage (Vdss)


PSMN004-55W,127 Applications


There are a lot of NXP USA Inc.
PSMN004-55W,127 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

Related Part Number

IRFP460A
IRFP460A
$0 $/piece
IRLU014NPBF
RFP40N10
RFP40N10
$0 $/piece
NDT451AN_J23Z
IRFR3711ZPBF
IRFBE30S
IRFBE30S
$0 $/piece
IXTK240N075L2
IXTK240N075L2
$0 $/piece
PHD18NQ10T,118
PHD18NQ10T,118
$0 $/piece

Get Subscriber

Enter Your Email Address, Get the Latest News