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SI4409DY-T1-E3

SI4409DY-T1-E3

SI4409DY-T1-E3

Vishay Siliconix

MOSFET P-CH 150V 1.3A 8-SOIC

SOT-23

SI4409DY-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 1.2Ohm
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.2W Ta 4.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 332pF @ 50V
Current - Continuous Drain (Id) @ 25°C 1.3A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 900mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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