IRF6706S2TRPBF

new-10%

Manufacturer part number:IRF6706S2TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V DIRECTFET S1

Case Package:SOT-23

Datasheet:IRF6706S2TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric S1
Number of Pins	5
Supplier Device Package	DIRECTFET S1
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	3.8mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.8W Ta 26W Tc
Power Dissipation	26W
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1810pF @ 13V
Current - Continuous Drain (Id) @ 25°C	17A Ta 63A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Rise Time	20ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9.2 ns
Turn-Off Delay Time	9.9 ns
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Input Capacitance	1.81nF
Drain to Source Resistance	6.5mOhm
Rds On Max	3.8 mΩ
Height	558.8μm
Length	4.826mm
Width	3.95mm
Radiation Hardening	No
RoHS Status	RoHS Compliant