SI4435FDY-T1-GE3

new-10%

Manufacturer part number:SI4435FDY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 12.6A 8SOIC

Case Package:SOT-23

Datasheet:SI4435FDY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2018
Series	TrenchFET® Gen III
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Channels	1
Power Dissipation-Max	4.8W Tc
Power Dissipation	2.2W
Turn On Delay Time	9 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	19m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12.6A Tc
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	-8.6A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
Max Junction Temperature (Tj)	150°C
Height	1.75mm
RoHS Status	ROHS3 Compliant