SI4446DY-T1-E3

new-10%

Manufacturer part number:SI4446DY-T1-E3

Manufacturer:Vishay Siliconix

Description:VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V

Case Package:SOT-23

Datasheet:SI4446DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	40mOhm
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Power Dissipation-Max	1.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 20V
Current - Continuous Drain (Id) @ 25°C	3.9A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	5.2A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	3.9A
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	30A
Nominal Vgs	1.6 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free