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SI4559ADY-T1-E3

SI4559ADY-T1-E3

SI4559ADY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 60V 5.3A 8-SOIC

SOT-23

SI4559ADY-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 120mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number SI4559
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 30 ns
Power - Max 3.1W 3.4W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.3A 3.9A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 70ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 30 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.3A
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 6.1 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.55mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.61041 $1.22082
5,000 $0.58175 $2.90875
12,500 $0.56128 $6.73536

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