2SK1119(F)

new-10%

Manufacturer part number:2SK1119(F)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 1000V 4A TO-220AB

Case Package:SOT-23

Datasheet:2SK1119(F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tube
Published	1998
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Technology	MOSFET (Metal Oxide)
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	100W Tc
Power Dissipation	100W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.8 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Ta
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	4A
Threshold Voltage	3.5V
Gate to Source Voltage (Vgs)	20V
Dual Supply Voltage	1kV
Nominal Vgs	3.5 V
Height	9mm
Length	10.3mm
Width	4.7mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free