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2SK1119(F)

2SK1119(F)

2SK1119(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 1000V 4A TO-220AB

SOT-23

2SK1119(F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 1998
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Technology MOSFET (Metal Oxide)
Lead Pitch 2.54mm
Number of Elements 1
Power Dissipation-Max 100W Tc
Power Dissipation 100W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 4A
Threshold Voltage 3.5V
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 1kV
Nominal Vgs 3.5 V
Height 9mm
Length 10.3mm
Width 4.7mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.928842 $0.928842
10 $0.876267 $8.76267
100 $0.826666 $82.6666
500 $0.779875 $389.9375
1000 $0.735730 $735.73

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