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SI4816BDY-T1-GE3

SI4816BDY-T1-GE3

SI4816BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8-SOIC

SOT-23

SI4816BDY-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series LITTLE FOOT®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 18.5mOhm
Max Power Dissipation 1.25W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number SI4816
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
Power - Max 1W 1.25W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 18.5m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.8A 8.2A
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Rise Time 9ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 5.8A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.75mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.84005 $1.6801
5,000 $0.81090 $4.0545
12,500 $0.79500 $9.54

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