SI4833ADY-T1-GE3

new-10%

Manufacturer part number:SI4833ADY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 4.6A 2.75W 72mohm @ 10V

Case Package:SOT-23

Datasheet:SI4833ADY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	LITTLE FOOT®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.93W Ta 2.75W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	7 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	72m Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.6A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	-4.6A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.072Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	20A
FET Feature	Schottky Diode (Isolated)
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant