IRFH5207TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFH5207TR2PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Supplier Device Package
8-PQFN (5x6)
Packaging
Cut Tape (CT)
Published
2007
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Element Configuration
Single
Power Dissipation
3.6W
Turn On Delay Time
7.2 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9.6mOhm @ 43A, 10V
Vgs(th) (Max) @ Id
4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
2474pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Ta 71A Tc
Gate Charge (Qg) (Max) @ Vgs
59nC @ 10V
Rise Time
12ns
Drain to Source Voltage (Vdss)
75V
Fall Time (Typ)
7.1 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
71A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Input Capacitance
2.474nF
Recovery Time
39 ns
Drain to Source Resistance
9.6mOhm
Rds On Max
9.6 mΩ
Nominal Vgs
2 V
Height
838.2μm
Length
5.9944mm
Width
5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
IRFH5207TR2PBF Product Details
IRFH5207TR2PBF Description
IRFH5207TR2PBF emerges as a member of HEXFET? power MOSFET provided by Infineon Technologies. It is compatible with existing surface mount techniques, thus it can be manufactured in an easier way. Low thermal resistance to PCB (<1.2 ??C/W) enables better thermal dissipation. Low conduction losses can also be realized due to its low RDS (on) (<9.6 m|?). As a result, IRFH5406TR2PBF is well suited for inverters in DC motors, secondary side synchronous rectification, boost converters, and DC-DC brick applications.